With an ultra-wide bandgap of 5.5 eV, exceptional thermal conductivity (~2200 W/m·K), and high breakdown strength (up to 20 MV/cm), diamond-based semiconductors can operate efficiently in extreme environments, surpassing traditional materials like silicon and GaN. Recent advancements, such as the development of n-channel diamond MOSFETs, demonstrate promising performance at temperatures exceeding 300°C, paving the way for high-speed, high-power applications without the need for extensive cooling systems.